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LOW TEMPERATURE DIFFUSION OF AU INTO SI IN THE SI (SUBSTRATE)-AU (FILM) SYSTEM.NAKASHIMA K; IWAMI M; HIRAKI A et al.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 25; NO 2; PP. 423-430; BIBL. 12 REF.Article

METALLIC STATE OF SI IN SI-NOBLE METAL SYSTEMS.IWAMI M; SHIMIZU A; HIRAKI A et al.1976; TECHNOL. REP. OSAKA UNIV.; JAP.; DA. 1976; VOL. 26; NO 1293; PP. 191-199; BIBL. 18 REF.Article

ELECTRONIC ENERGY STATES OF TUNGSTEN DICHALCOGENIDES BY LOW ENERGY ELECTRON LOSS SPECTROSCOPY STUDIESITO T; IWAMI M; HIRAKI A et al.1981; J. PHYS. SOC. JPN.; ISSN 0031-9015; JPN; DA. 1981; VOL. 50; NO 1; PP. 106-113; BIBL. 24 REF.Article

A QUANTITATIVE ANALYSIS OF ELECTRON ENERGY LOSS SPECTRA OF KEV ELECTRONS FROM THIN-FILM-SUBSTRATE SYSTEMITO T; IWAMI M; HIRAKI A et al.1981; J. PHYS. SOC. JPN.; ISSN 0031-9015; JPN; DA. 1981; VOL. 50; NO 8; PP. 2704-2712; BIBL. 24 REF.Article

GROWTH OF CRYSTALS OF ZN3AS2 FROM CD3AS2IWAMI M; YOSHIDA M; KAWABE K et al.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 12; PP. 1861-1862; BIBL. 5 REF.Serial Issue

ELECTRONIC ENERGY STATES OF HFSE2 AND NBSE2 BY LOW ENERGY ELECTRON LOSS SPECTROSCOPY STUDYITO T; IWAMI M; HIRAKI A et al.1981; J. PHYS. SOC. JPN.; ISSN 0031-9015; JPN; DA. 1981; VOL. 50; NO 6; PP. 1978-1985; BIBL. 28 REF.Article

STUDIES ON A NEW IMMUNOACTIVE PEPTIDE, FK-156. I: TAXONOMY OF THE PRODUCING STRAINSGOTOH T; NAKAHARA K; IWAMI M et al.1982; JOURNAL OF ANTIBIOTICS; ISSN 0021-8820; JPN; DA. 1982; VOL. 35; NO 10; PP. 1280-1285; BIBL. 8 REF.Article

ELECTRONIC STATES OF NI-SILICIDES AND ITS RELATION TO METAL-SILICILIDE/SI INTERFACESIWAMI M; OKUNO K; KAMEI S et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 7; PP. 1542-1545; BIBL. 19 REF.Article

APPLICATION OF AUGER ELECTRON SPECTROSCOPY TO THE STUDY OF METAL-SEMICONDUCTOR INTERFACIAL REACTIONSUCHOL KIM; KAMMURA W; IWAMI M et al.1980; TECHNOL. REP. OSAKA UNIV.; ISSN 0030-6177; JPN; DA. 1980; VOL. 30; NO 1517-1550; PP. 81-87; BIBL. 14 REF.Article

SI (LMM) AUGER ELECTRON EMISSION FROM SI ALLOYS BY THE KEV AR+ ION BOMBARDMENT, NEW EFFECT AND APPLICATIONHIRAKI A; SU CHOL KIM; IMURA T et al.1979; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1979; VOL. 18; NO 9; PP. 1767-1772; BIBL. 17 REF.Article

METALLIC STATE OF SI IN SI-NOBLE-METAL VAPOR-QUENCHED ALLOYS STUDIED BY AUGER ELECTRON SPECTROSCOPY. = ETAT METALLIQUE DE SI DANS DES ALLIAGES TREMPES VAPOR EN METAL NOBLE - SI ETUDIES PAR SPECTROSCOPIE ELECTRONIQUE AUGERHIRAKI A; SHIMIZU A; IWAMI M et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 2; PP. 57-60; BIBL. 13 REF.Article

LOW ENERGY ELECTRON LOSS SPECTROSCOPIC STUDY OF PD-SI (111) SYSTEM = ETUDE PAR SPECTROSCOPIE DE PERTE POUR DES ELECTRONS DE BASSE ENERGIE DU SYSTEME PD-SI (111)OKUNO K; ITO T; IWAMI M et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 44; NO 2; PP. 209-212; BIBL. 9 REF.Article

X-RAY PHOTOELECTRON AND ELECTRON ENERGY LOSS STUDIES OF SI-SIO2 SYSTEM: ANGULAR VARIATIONITO T; NISHIKUNI M; IWAMI M et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 11; PP. 2051-2056; BIBL. 20 REF.Article

DIELECTRIC ANOMALY IN AMORPHOUS SI100-XAUX SYSTEM.SANO T; IWAMI M; HIRAKI A et al.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 23; NO 12; PP. 971-973; BIBL. 8 REF.Article

CRYSTAL GROWTH OF BORON MONOPHOSPHIDE AND ITS PROPERTIES.IWAMI M; TOHDA T; KAMMURA W et al.1976; TECHNOL. REP. OSAKA UNIV.; JAP.; DA. 1976; VOL. 26; NO 1294; PP. 201-209; BIBL. 14 REF.Article

ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS.HIRAKI A; SHUTO K; KIM S et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 9; PP. 611-612; BIBL. 4 REF.Article

TWO-BAND AND IMPURITY-BAND CONDUCTION IN THE CD3-XZNXAS2 ALLOY CRYSTALS.ITO T; WADA M; IWAMI M et al.1977; J. PHYS. SOC. JAP.; JAP.; DA. 1977; VOL. 43; NO 5; PP. 1672-1678; BIBL. 15 REF.Article

Low-temperature Ti-silicide forming reaction in very thin Ti-SiO2/Si(111) contact systems = Réactions de formation de siliciure de Ti à basse température dans systèmes de contact très fins Ti-SiO2/Si(111)IWAMI, M; HIRAKI, A.Japanese journal of applied physics. 1985, Vol 24, Num 5, pp 530-536, issn 0021-4922Article

ELECTRONIC STATES OF SILICON IN NI-SILICIDES BY NUCLEAR MAGNETIC RESONANCEOKUMO K; IWAMI M; HIRAKI A et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 33; NO 8; PP. 899-901; BIBL. 15 REF.Article

SPUTTERING YIELDS OF SI AND NI FROM THE NI1-XSIX SYSTEM STUDIED BY RUTHERFORD BACKSCATTERING SPECTROMETRYSU CHOL KIM; YAMAGUCHI S; KATAOKA Y et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 1; PP. 39-41; BIBL. 9 REF.Article

STUDIES ON NEW VASODILATORS, WS-1228 A AND B. I: DISCOVERY, TAXONOMY, ISOLATION AND CHARACTERIZATION = ETUDE DE NOUVEAUX VASODILATEURS, WS 1228 A ET B. I: DECOUVERTE, TAXONOMIE, ISOLEMENT ET CARACTERISATIONYOSHIDA K; OKAMOTO M; UMEHARA K et al.1982; J. ANTIBIOT.; ISSN 0021-8820; JPN; DA. 1982; VOL. 35; NO 2; PP. 151-156; BIBL. 13 REF.Article

ION BEAM ANALYSIS OF THE REACTION OF PD WITH SI(100) AND SI(111) AT ROOM TEMPERATURETROMP RM; VAN LOENEN EJ; IWAMI M et al.1983; SURFACE SCIENCE; ISSN 0039-6028; NLD; DA. 1983; VOL. 124; NO 1; PP. 1-25; BIBL. 32 REF.Article

DETERMINATION OF HYDROGEN CONCENTRATION IN AMORPHOUS SILICON FILMS BY NUCLEAR ELASTIC SCATTERING (NES) OF 100 MEV3HE2+IWAMI M; IMURA T; HIRAKI A et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 12; PP. 1249-1251; BIBL. 8 REF.Article

STUDIES ON WF-361, A NEW ANTITUMOR ANTIBIOTICUMEHARA K; NAKAHARA K; KIYOTO S et al.1983; JOURNAL OF ANTIBIOTICS; ISSN 0021-8820; JPN; DA. 1983; VOL. 36; NO 5; PP. 478-483; BIBL. 7 REF.Article

ORIGIN OF SI (LMM) AUGER ELECTRON EMISSION FROM SILICON AND SI-ALLOYS BY KEV AR+ ION BOMBARDMENTIWAMI M; SUCHOLKIM; KATAOKA Y et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 9; PP. 1627-1632; BIBL. 15 REF.Article

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